FIELD: electrical energy.
SUBSTANCE: non-volatile memory cell is disclosed, containing a storage layer of electrically insulating polarized material, into which data can be recorded in the form of a direction of electrical polarization, preferably, of ferroelectric material, located between a layer with magnetic frustration, preferably made of anti-perovskite piezomagnetic material based on Mn, and a supplying electrode. The layer with magnetic frustration and the supplying electrode have different change in density of states in response to change in electrical polarization of the storage layer, so that resistance to tunneling of an electron or spin through the storage layer depends on the direction of electrical polarization.
EFFECT: obtainment of a non-volatile memory cell.
20 cl, 4 dwg
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