FIELD: electricity.
SUBSTANCE: invention relates to the field of devices of non-volatile memory based on the phenomenon of ferroelectricity with destructive readout, to which stringent requirements are applied for the resource, retention time and energy intensity. Invention is based on a cell of ferroelectric memory. Technical result is achieved by using an additional overlap between the layers of the lower electrode and the ferroelectric and the ferroelectric and the upper electrode.
EFFECT: technical result of this invention is to create a ferroelectric memory cell with a simplified and more reliable design that can be used to create large capacity memory circuits.
3 cl, 5 dwg
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