HEATING DEVICE FOR THERMOMIGRATION OF LIQUID ZONES IN SILICON PLATES Russian patent published in 2025 - IPC H05B3/00 H01L21/324 

Abstract RU 2840957 C1

FIELD: heating.

SUBSTANCE: invention relates to semiconductor technology and is intended to create a uniform field of temperature gradient in silicon plates and other semiconductor materials during their alloying by thermomigration method. Heating device for thermal migration of liquid zones in silicon plates comprises graphite cylinder installed on two support rods penetrating it. On cylinder side surface in middle part with offset of 20-30 mm from ends heating coil of refractory wire is wound, wherein said graphite cylinder is enveloped by three heat cylindrical shields. Two of said shields cover graphite cylinder side surface free from heating coil while third multilayer shield covers the entire side surface of graphite cylinder. Silicon plates are located vertically inside detachable cassettes in parallel to flat radiating end surfaces of graphite cylinder.

EFFECT: high uniformity of the field of the temperature gradient in silicon wafers, reliability and energy efficiency of the heating device.

1 cl, 3 dwg

Similar patents RU2840957C1

Title Year Author Number
HEATING DEVICE FOR THERMOMIGRATION OF LIQUID ZONES IN SILICON WAFER 2023
  • Seredin Boris Mikhailovich
  • Popov Viktor Pavlovich
  • Malibashev Aleksandr Vladimirovich
  • Zaichenko Aleksandr Nikolaevich
  • Gavrus Igor Viktorovich
  • Skidanov Aleksei Aleksandrovich
RU2805459C1
METHOD FOR OBTAINING SILICON STRUCTURE 2023
  • Seredin Boris Mikhailovich
  • Popov Viktor Pavlovich
  • Malibashev Aleksandr Vladimirovich
  • Zaichenko Aleksandr Nikolaevich
  • Gavrus Igor Viktorovich
  • Skidanov Aleksei Aleksandrovich
RU2810403C1
FACILITY FOR SINGLE CRYSTALS GROWING BY METHOD OF AXIAL HEAT CURRENT NEARBY SOLID-MELT INTERFACE 2007
  • Gonik Mikhail Aleksandrovich
RU2357021C1
DEVICE FOR GROWING OF REFRACTORY SINGLE CRYSTALS 2002
  • Arzumanjan Sh.O.
RU2208665C1
INDUCTION HEATING APPARATUS 2020
  • Babenko Pavel Gennadevich
RU2759171C1
METHOD OF PRODUCING THROUGH EPITAXIAL CHANNELS IN SILICON WAFERS 2023
  • Seredin Boris Mikhailovich
  • Gavrus Igor Viktorovich
  • Zaichenko Aleksandr Nikolaevich
  • Loganchuk Sergei Mikhailovich
  • Malibashev Aleksandr Vladimirovich
  • Popov Viktor Pavlovich
  • Iatsenko Aleksei Nikolaevich
RU2818517C1
DEVICE FOR PRODUCING SPECIMENS WITH SPATIAL COORDINATE GRID 0
  • Potapov Ivan Nikolaevich
  • Lunev Aleksandr Grigorevich
  • Larin Eduard Nikolaevich
  • Kozeradskij Stanislav Aleksandrovich
  • Vnukov Viktor Ivanovich
  • Snegirev Aleksandr Alekseevich
  • Umanskij Arkadij Mikhajlovich
  • Pravikov Vitalij Anatolevich
SU920441A1
METHOD OF GROWING PROFILED CRYSTALS FROM MELT 2004
  • Borodin A.V.
RU2265088C1
FACILITY FOR GROWING MONO-CRYSTALS OF HIGH-MELTING OXIDES 2005
  • Kanevskij Vladimir Mikhajlovich
  • Raevskij Vladimir Leonidovich
  • Sytin Vladimir Nikolaevich
  • Semenov Vladimir Borisovich
RU2344205C2
METHOD OF PRODUCING MONOCRYSTALLINE SiC 2016
  • Avrov Dmitrij Dmitrievich
  • Lebedev Andrej Olegovich
  • Tairov Yurij Mikhajlovich
  • Fadeev Aleksej Yurevich
RU2621767C1

RU 2 840 957 C1

Authors

Seredin Boris Mikhailovich

Popov Viktor Pavlovich

Iatsenko Aleksei Nikolaevich

Gavrus Igor Viktorovich

Loganchuk Sergei Mikhailovich

Iakovenko Aleksei Anatolevich

Dates

2025-05-30Published

2024-12-04Filed