FIELD: silicon wafers.
SUBSTANCE: invention relates to a method for producing an n-type silicon wafer comprising a structure in the form of through epitaxial channels of p-type conductivity. Aluminium zones are obtained on the working surface of the silicon wafer and thermomigration of the melt of the mentioned aluminium zones is carried out through the silicon wafer with the formation of through epitaxial channels of p-type conductivity. The mentioned aluminium zones are obtained using magnetron deposition and photolithography method. Before the formation of the mentioned aluminium zones, a silicon nitride film with a thickness in the range of 0.2-0.5 mcm is applied to the surface opposite the working surface of the silicon wafer.
EFFECT: flatness of the surface of the resulting silicon wafers.
1 cl, 4 ex
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