METHOD OF PRODUCING THROUGH EPITAXIAL CHANNELS IN SILICON WAFERS Russian patent published in 2024 - IPC C30B19/08 C30B29/06 

FIELD: semiconductor devices.

SUBSTANCE: invention relates to semiconductor technology and can be used in making semiconductor devices for electronic equipment. In silicon plates liquid zones based on aluminium are formed and ensured their movement in volume of working 1 silicon plate under action of temperature gradient G. To working 1 silicon plate, seed plate 2 is installed, which is made with protrusions 4, the height of which sets the thickness of the gap between seed 2 and working 1 plates. Liquid flat zone on the basis of aluminium is formed in the form of flat perforated zone 3 with breaks-holes in places of projections 4 in the gap between plates 1 and 2. Under the effect of the temperature gradient G, perforated zone 3 migrates through working plate 1, leaving non-recrystallized areas corresponding to projections 4, and forming through epitaxial channels penetrating working plate 1. Areas of working plate 1, recrystallized by perforated zone 3, form matrix doped with aluminium.

EFFECT: possibility of controlled control of such electrophysical properties of through epitaxial channels as type of their conductivity and electric conductivity, which are taken from working 1 plate, the choice of which is not limited; possibility of obtaining through epitaxial channels with diameter of 5–20 mcm is provided by using perforated zone 3; possibility of obtaining through epitaxial channels with diameter of more than 200 mcm is provided by using seed plate 2.

1 cl, 3 dwg