METHOD FOR MANUFACTURING THINNED MULTI-ELEMENT PHOTODETECTOR BASED ON INDIUM ANTIMONIDE WITH IMPROVED UNIFORMITY AND INCREASED MECHANICAL STRENGTH Russian patent published in 2024 - IPC H01L31/41 G01J5/06 

FIELD: semiconductor photodetectors.

SUBSTANCE: invention relates to the technology of manufacturing semiconductor photodetectors (PD) and can be used to create matrix photodetectors (MPD) for various purposes, including hybrid ones, in which the readout LSI is connected to a photosensitive matrix (PSE matrix, MFSE) using In microcontacts with subsequent thinning. A method has been proposed for the manufacture of a thinned multi-element photodetector based on indium antimonide, including the manufacture of a matrix of photosensitive elements (MPSE) with a thin absorbing layer, hybridized with a large-scale integrated circuit (LSI) for reading with indium microcontacts, with an antireflective coating applied to the back side of the MPSE, before sputtering the antireflective coating coating from the surface of the matrix of photosensitive elements, as a result of treatment with a low-energy flow of positively charged argon ions, the damaged layer of the required thickness is removed, after which an antireflection coating is formed based on multilayer interference layers of silicon and silicon dioxide.

EFFECT: multilayer interference coating compensates for the mechanical stresses arising in each individual layer in such a way that the mechanical strength of the thinned PSE matrix increases, and also redistributes the mechanical stresses from the front to the back side of the PSE matrix with a more uniform distribution over the area, thus contributing to both strengthening and reducing the level of dark currents of photosensitive elements.

3 cl, 6 dwg