METHOD FOR MANUFACTURE OF ARRAY PHOTODETECTOR Russian patent published in 2021 - IPC H01L31/18 C23C14/04 

FIELD: detectors.

SUBSTANCE: invention relates to the technology of multi-element array photodetectors (APD) based on semiconducting materials sensitive in a wide spectral range, including APDs with a photosensitive base area based on various semiconducting materials. A method of manufacture of a multi-element photodetector includes manufacturing a photosensitive element array from one of the semiconductor materials selected from CdxHg1-xTe, InSb, InGaAs, QWIP, connecting the array with a detection circuit by indium microcontacts, forming a passivating layer on the rear side of the array by treating the array surface of the photosensitive element with low-energy argon ions, and applying an antireflective coating ensuring minimal reflection in the spectral range of photodiode sensitivity, wherein the antireflective coating is applied by vacuum deposition using a mask to protect the detection circuit, wherein said mask is part of the precision structure of the apparatus for loading the array of the photosensitive element into a vacuum chamber, wherein the mask is combined with the array of the photosensitive element so that the mask does not touch the photosensitive surface during the deposition process.

EFFECT: invention is intended to increase the yield of serviceable array photodetectors by reducing overheating of the photosensitive element.

3 cl, 2 dwg, 1 ex