FIELD: semiconductor engineering. SUBSTANCE: device has horizontal-pipe furnace and crystal holder, strip centering and holding facility, strip compression adjusting unit. Strip centering and holding facility is support carrying set of plane-parallel disks made of semiconductor material and coated with silicon nitride. Movable rod inserted in addition between this facility and strip compression adjusting unit has ball-and-socket joint. Strip compression adjusting unit is mounted beyond furnace pipe. EFFECT: provision for high-temperature thermocompression paired welding of semiconductor strips. 3 cl, 1 dwg
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