FIELD: microelectronics; production of insulated semiconductor structures. SUBSTANCE: method used for reducing sag and improving plane-parallel design to enlarge diameter of structures being manufactured up to 300 mm includes connection of single-crystalline embossed-surface substrate fully or partially covered with insulation and polycrystalline silicon layer, minimum 30 mcm thick, to supporting substrate by spraying connection material layer onto both sides of substrate. Sprayed suspension incorporates following ingredients: finely dispersed amorphous silicon dioxide, boron acid, and deionized water. EFFECT: improved geometry of structure; enhanced environmental friendliness of process. 8 cl, 1 dwg
