PROCESS OF RELIEF MANUFACTURE ON SEMICONDUCTOR SUBSTRATE Russian patent published in 1996 - IPC

FIELD: microelectronics. SUBSTANCE: layers of electron resist of multilayer resistive mask are deposited in succession on silicon substrate. Solution of copolymers of polymethylacrylate and metacryl acid in solvent based on butylacetate, toluence and ethylcellosolve is used as material deposition of layer adjoining substrate. Layer 0.01-0.1 μm thick is formed and thermally treated at temperature from 210 to 221 C. Multilayer resistive mask produced this way makes it possible to prevent etching of semiconductor substrate under later chemical etching and to ensure required shape of elements of relief. EFFECT: improved precision in manufacture of elements of relief.