METHOD OF MANUFACTURING AIR BRIDGES Russian patent published in 2018 - IPC H01L23/52 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the technology of forming air bridges intended for electrically connecting the contact areas of semiconductor structures with a large difference in the surface relief. Essence of manufacturing an air bridge for semiconductor structures is to partially reduce the surface relief difference by applying several layers of planar resist, the formation of a lithographic mask and the opening of windows in the planar resist in the areas of contact of metal bridges with contact areas, followed by heating to reflow the upper layer of the resist. After that, a two-layer system of resistors is applied for explosive lithography with subsequent exposure and manifestation of the areas of the bridge. Last operation to form the metallization of an air bridge involves spraying the metal, exploding it in an appropriate solvent, and dissolving the planarizing layers under the bridges, if this does not occur in the solvent for the explosion.

EFFECT: technical result of the invention is a reproducible and easily controlled at each stage technology of forming an air bridge, thereby providing an electrical connection of the contact areas of semiconductor structures and improving the characteristics of the device, in particular, it is possible to create a qualitative electrical contact to narrow crest meshes of a quantum-cascade laser with a width of less than 50 mcm.

3 cl, 10 dwg