SHORT-CIRCUITED SEMICONDUCTOR ELEMENT AND METHOD OF ITS OPERATION Russian patent published in 2021 - IPC H01L23/62 H01L29/74 

FIELD: electricity.

SUBSTANCE: in modern applications of energy transfer and high-power electric drives also require short-circuited individual series-connected submodules in case of damage, in order to ensure further operation of systems. Shortening of these submodules also serves to protect the used equipment against destruction, and therefore is essentially intended for protection of this type of application. Short-circuited semiconductor element (15) comprises semiconductor substrate (16), in which rear base region (6) of first conductivity type, internal area (7) of the second type of conductivity, which is additional to the first type of conductivity, and front base area (8) of the first type of conductivity are located. Rear base area is electrically conductively connected to rear electrode (11), and front base region is electrically conductively connected to front electrode (10), where at least one connecting structure on front side (17) is built into the base area on the front side and at least partially coated with the front electrode, and / or at least one comprising structure on rear side (31) is built into rear base area and at least partially covered with rear electrode. Switching structure is an emitter structure of the second conductivity type, which contacts in an electroconductive way with the electrode located on the base area and accordingly built into it, and which can be connected by means of at least one trigger structure (20), which acts on it through semiconductor substrate by means of electricity and which can be activated, in its turn, by means of electric connection signal applied to it. In the activated state, the trigger structure injects the electric current pulse into the semiconductor substrate, which irretrievably destructs the first semiconductor junction formed between the including structure and the base region built into it, and / or second semiconductor junction formed between said base region and inner region.

EFFECT: short-circuited semiconductor element and method of its operation are described.

24 cl, 18 dwg