HEAVY-POWER MICROWAVE TRANSISTOR STRUCTURE Russian patent published in 2003 - IPC

FIELD: semiconductor electronics. SUBSTANCE: transistor structure has collector, base, and emitter zones as well as ballast resistor contacting metallized surface of emitter zone on one end; on other end it contacts metallized surface of pad for connecting emitter conductor which has depressions whose distribution density through resistor width is matched with distribution function of resistance R(x) between metallized surface of emitter zone and emitter conductor over ballast resistor width. EFFECT: reduced collector-to-emitter transfer capacitance, available collector capacitance, and ballast resistor length; enhanced power gain and reduced size of structure. 1 cl, 2 dwg