FIELD: microelectronics. SUBSTANCE: structure includes submicron buffer layer located between substrate and submicron layer of gallium arsenide of n type conductance. Buffer layer is produced in the form of succession of alternating layers of gallium arsenide of one type of conductance and δ-doped layer of opposite type of conductance. Surface concentration of dopant of each d layer meets relation specified in description of invention. EFFECT: facilitated manufacture, improved operational characteristics. 1 dwg
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