SEMICONDUCTOR STRUCTURE MANUFACTURING PROCESS Russian patent published in 1998 - IPC

FIELD: semiconductor devices. SUBSTANCE: process involves the following operations: source substrate is connected through junction layer to supporting substrate; part of source substrate is removed, and active components are shaped. Low-resistance layer is formed on source substrate on junction layer side; high-resistance superconductor or antimony-doped superconductor is used as supporting substrate and single-crystalline substrate with epitaxial layer or with dielectric-covered microprofile, or with microprofile partially covered with dielectric, source substrate. EFFECT: facilitated procedure. 3 cl, 10 dwg