PROCESS OF PRODUCTION OF CRYSTALLINE BUFFER LAYERS Russian patent published in 1994 - IPC

FIELD: semiconductor electronics. SUBSTANCE: dielectric layer is deposited in the form of amorphous material at temperature of substrate not higher than 300 C. Then layer is heated to temperature providing for phase transition into crystalline state by pulse treatment with plasma fluxes or quantum fluxes within spectral range of vacuum ultra violet or soft X-ray radiation with depth of penetration into substance nor exceeding thickness h of deposited layer. Duration of treatment pulse τ meets condition τ≅h²/κ, where k is coefficient of thermal diffusivity. Transition of dielectric into crystalline state is performed by joint pulse treatment with fluxes of plasma and fluxes of quanta. Radiation of spectral range 5-30 mm with power density not less than 10⁴ W/cm² is used as source of flux of quanta to ensure efficiency of achievement of result in case of manufacture of buffer layers on basis of zirconates. EFFECT: facilitated production of crystalline buffer layers. 4 cl