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1 820 782

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A1

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Application

4825554/25, 1990-05-15

(22)

Actual filing date

1990-05-15

(45)

Published

1996-11-27

(72)

Inventor

Dudarchik A.I.Krasnitskij V.Ja.Turtsevich A.S.Kozlov A.L.Kabakov M.M.

PROCESS OF FORMATION OF SILICON DIOXIDE FILMS Russian patent published in 1996 - IPC

Abstract SU 1820782 A1

FIELD: microelectronics. SUBSTANCE: process is related to technology of precipitation of silicon dioxide films from gas phase and may find use in manufacture of superlarge-scale integrated circuits. Prior to precipitation reactor is blown through with nitrogen monoxide under pressure 40-266 Pa in the course of 3-20 min. Thermal treatment of films in oxygen is conducted after precipitation. EFFECT: improved quality of films due to reduced presence of flaws and enhanced electric strength. 1 tbl

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SU 1 820 782 A1

Authors

Dudarchik A.I.

Krasnitskij V.Ja.

Turtsevich A.S.

Kozlov A.L.

Kabakov M.M.

Dates

1996-11-27—Published

1990-05-15—Filed

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