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1 799 203

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A1

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IPC

(21) (22)

Application

4904085/21, 1991-01-22

(22)

Actual filing date

1991-01-22

(45)

Published

1996-10-10

(72)

Inventor

Turtsevich A.S.Krasnitskij V.Ja.Dovnar N.A.Buljak B.N.Khimko G.A.Kastritskij L.V.

METHOD FOR GENERATION OF INTER-GATE CONNECTIONS IN INTEGRAL CIRCUITS Russian patent published in 1996 - IPC

Abstract SU 1799203 A1

FIELD: microelectronics. SUBSTANCE: when windows are opened for access to contact plates and areas for plate separation, window sizes conform to condition of overlapping of lower passive layer of phosphor-silicate glass by upper passive layer of silicon nitride by 0.2-5 mcm. EFFECT: increased functional capabilities. 2 cl, 1 dwg, 2 tbl

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SU 1 799 203 A1

Authors

Turtsevich A.S.

Krasnitskij V.Ja.

Dovnar N.A.

Buljak B.N.

Khimko G.A.

Kastritskij L.V.

Dates

1996-10-10—Published

1991-01-22—Filed

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