FIELD: microelectronics. SUBSTANCE: epitaxial layer of field-effect p-n transistor is doped with impurities of first or first and second polarity of conductivity. Source electrode is shaped by anisotropic etching of layer which is above epitaxial layer and is made of conducting material containing dope of first polarity of conductivity. Gate is shaped by implanting impurity of second polarity of conductivity into source electrode window; channel is shaped by implanting impurity of first polarity of conductivity into same window and by side diffusion. Insulation is formed on side surfaces of source electrode. EFFECT: facilitated manufacture. 4 cl, 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| PROCESS OF MANUFACTURE OF BICOS/BIMOS DEVICE | 1998 |
|
RU2141148C1 |
| METHOD FOR MANUFACTURING SELF-SCALED BIPOLAR CMOS STRUCTURE | 2003 |
|
RU2234165C1 |
| PROCESS OF MANUFACTURE OF BIPOLAR COS/MOS STRUCTURE | 1998 |
|
RU2141149C1 |
| BICMOS DEVICE AND PROCESS OF ITS MANUFACTURE | 1996 |
|
RU2106719C1 |
| SOLID STATE POWER TRANSISTOR PRODUCTION TECHNIQUE | 2016 |
|
RU2623845C1 |
| MANUFACTURING TECHNIQUE FOR FIELD-EFFECT SEMICONDUCTOR STRUCTURES WITH CONTROL P-N JUNCTION AND VERTICAL CHANNELS | 1991 |
|
SU1797413A1 |
| BIPOLAR CMOS DEVICE AND ITS MANUFACTURING PROCESS | 2003 |
|
RU2282268C2 |
| METHOD OF CMOS TRANSISTORS MANUFACTURING WITH RAISED ELECTRODES | 2006 |
|
RU2329566C1 |
| METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE | 2010 |
|
RU2431905C1 |
| METHOD FOR MANUFACTURING BSIT-TRANSISTOR WITH GUARD RINGS | 2013 |
|
RU2524145C1 |
