FIELD: optics. SUBSTANCE: photodetector has interdigital system of contact electrodes forming contacts "metal-semiconductor" together with active layer of semiconductor structure with width D of contact electrode not less than 0.5 μkm and not exceeding width of interelectrode gap t. Height of electrode does not exceed its width and value of interelectrode gap is chosen from relationship , where ε=0.05; R is resistance of photodetector load, Ohm; Vsat is rate of saturation of photogenerated carriers, m/s; εs is relative dielectric permittivity of semiconductor material; L is aperture of interdigital system of contacts. EFFECT: facilitated manufacture, expanded application field. 2 dwg
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Authors
Dates
1995-09-20—Published
1991-01-22—Filed