PHOTODETECTOR Russian patent published in 1995 - IPC

Abstract SU 1797418 A1

FIELD: optics. SUBSTANCE: photodetector has interdigital system of contact electrodes forming contacts "metal-semiconductor" together with active layer of semiconductor structure with width D of contact electrode not less than 0.5 μkm and not exceeding width of interelectrode gap t. Height of electrode does not exceed its width and value of interelectrode gap is chosen from relationship , where ε=0.05; R is resistance of photodetector load, Ohm; Vsat is rate of saturation of photogenerated carriers, m/s; εs is relative dielectric permittivity of semiconductor material; L is aperture of interdigital system of contacts. EFFECT: facilitated manufacture, expanded application field. 2 dwg

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SU 1 797 418 A1

Authors

Averin S.V.

Dates

1995-09-20Published

1991-01-22Filed