PHOTODETECTOR Russian patent published in 1994 - IPC

FIELD: fast-acting photodetectors. SUBSTANCE: invention may find use for design of fast-acting receivers of radiation in optical systems of information transmission. In known photodetector composed of two opposing pin conductive electrodes which form contacts with active Schottky layer, height of barrier of one Schottky contact is considerably smaller than that of barrier of the other contact. Difference in height of barriers of both contacts amounts to ϕ₁-ϕ₂=L²qN/2ε, where ϕ₁ is height of barrier of one of Schottky contacts; ϕ is height of barrier of the other Schottky contact; L is distance between electrodes of opposing pin system of Schottky barrier contacts; q is charge of electron; N is concentration of basic charge carriers of active layer of semiconductor structure; e is relative dielectric permittivity of semiconductor material of active layer. EFFECT: improved operational characteristics and reliability of photodetector. 2 dwg