PHOTODETECTOR Russian patent published in 1995 - IPC

Abstract SU 1820795 A1

FIELD: fast photodetectors. SUBSTANCE: device has two conducting electrodes which rods are directed in opposite. One electrode is a contact with Schottky-effect barrier in direction of active layer. Another rod electrode is an ohmic contact direction of active layer. Distance between electrodes L conforms to equation L= [2εVD1/gN]1/2, where VD1 is diffusion potential of contact with Schottky-effect barrier, ε relative dielectric permeability of semiconductor material in active layer, q is charge of single electron, N is concentration of charge carrier in active layer. EFFECT: increased functional capabilities. 2 dwg

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SU 1 820 795 A1

Authors

Averin S.V.

Dmitriev M.D.

Dates

1995-09-10Published

1991-03-01Filed