FIELD: fast photodetectors. SUBSTANCE: device has two conducting electrodes which rods are directed in opposite. One electrode is a contact with Schottky-effect barrier in direction of active layer. Another rod electrode is an ohmic contact direction of active layer. Distance between electrodes L conforms to equation L= [2εVD1/gN]1/2, where VD1 is diffusion potential of contact with Schottky-effect barrier, ε relative dielectric permeability of semiconductor material in active layer, q is charge of single electron, N is concentration of charge carrier in active layer. EFFECT: increased functional capabilities. 2 dwg
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Authors
Dates
1995-09-10—Published
1991-03-01—Filed