MICROWAVE PHOTODETECTOR OF LASER RADIATION Russian patent published in 2018 - IPC H01L31/101 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor electronics and can be used to create photodetectors (PD) laser radiation (LI). Microwave photodetector of laser radiation consists of a substrate 1, made of n-GaAs, and sequentially deposited: Bragg reflector 2, tuned to wavelength of laser radiation in the range of 800–860 nm, including alternating layers pairs of n-AlAs 3 / n-Al_0.2Ga_0.8As 4, a base layer made of n-GaAs 5, with a thickness of 50–100 nm, undoped i-GaAs 6 layer with a thickness of 0.9–1.1 mcm, emitter layer of p-GaAs 7 with a thickness of 450–400 nm, frontal layer of p-Al_0.2Ga_0.8As, the sum of the thicknesses of the base, undoped and emitter layers does not exceed 1.5 microns.

EFFECT: invention provides possibility of creating such a microwave photodetector of laser radiation, which would have a low barrier capacitance, provided high speed and would absorb more than 95 % of photons from a long wavelength in the range of 800–860 nm, ensuring close to complete collection of photogenerated carriers.

3 cl, 5 dwg