METHOD FOR PRODUCTION OF PHOTODETECTORS USING METAL- DIELECTRIC-SEMICONDUCTOR STRUCTURES ON SEMICONDUCTOR SUBSTRATES Russian patent published in 1996 - IPC

FIELD: photo electronics. SUBSTANCE: anode oxide is grown on semiconductor surface after polishing. Passive dielectric layer with low rate of mercury diffusion is applied on oxide under temperature below 100 C. Depth of layer is not greater than 1000 A. Then device is burnt under temperature of 100-200 C for time which decreases concentration of electric active centers. Then, anode oxide, passive layer and substrate layer near surface are removed. Burning is done in steps lowering its temperature to 100 C, depth d of substrate layer near surface to be removed conform to equation , where D_cd(T_i) is diffusion rate of C_d to Cd_xH_g1-xTe under temperature T_i, t_i is burning time for their amount l. EFFECT: increased functional capabilities. 3 cl, 2 dwg