SWITCHING DEVICE Russian patent published in 1995 - IPC

FIELD: microwave devices. SUBSTANCE: device has n semiconductor diodes connected in series with coaxial transmission line section. Insulating disk with double-sided symmetrical metallization in the form of flat rings with n holes equally spaced apart and aligned with respective holes cut in insulating disk is installed in sectional area between internal conductor and ground bus. Each hole receives semiconductor diode. Inductive component is flat conducting ring placed on one of insulating disk sides concentrically in respect to flat ring. Flat conducting ring is connected through jumper to ground bus. Equations are given for selecting values of first and second capacitors and inductive component. EFFECT: improved power capacity and matching of great number of diode during transmission mode due to reduced nonlinearity in line (of capacitance nature) at extreme points of range and its compensation in working point. 3 dwg