SILICON MONOCRYSTAL GROWING METHOD Russian patent published in 1995 - IPC

Abstract SU 1824958 A1

FIELD: production of silicium with use of waste matter as raw material. SUBSTANCE: method comprises steps of growing silicium by Chochralsky method; entrapping quartz particles from surface of a melt before seeding with use of a quartz trap; rotating a crucible with a rate 1-2 revolution per min. EFFECT: enhanced effectiveness of the method due to using of waste matters as raw material. 2 cl, 5 dwg

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SU 1 824 958 A1

Authors

Khuditsyn E.A.

Dates

1995-10-10—Published

1991-05-22—Filed