FIELD: semiconductor metallurgy. SUBSTANCE: method involves applying DC magnetic field with induction of 0.03-0.06 T, with crucible and crystallizer being rotated. Crucible has spherical bottom. Ratio of crucible diameter dc and crystallizer diameter dcr is dc≥ 3,15dcr. EFFECT: increased efficiency and high quality of monocrystals. 3 dwg, 1 tbl
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