METHOD OF MAKING HIGH-OHMIC POLYSILICON RESISTOR Russian patent published in 2009 - IPC H01C7/00 

FIELD: physics.

SUBSTANCE: invention relates to microelectronics, more specifically to the technology of making high-ohmic polysilicon resistors, and can be used in production of polysilicon resistors, as discrete components and as components of integrated circuits. The method of making a high-ohmic polysilicon resistor involves depositing a polysilicon layer on a dielectric which insulates it from a substrate and components of the integrated circuit, formation of heavily doped regions of the resistor contacts through ion implantation of a large dose of impurities or impurity diffusion, formation of the next polysilicon region through photolithography, deposition of a metal layer with subsequent photolithography, formation of a doped layer on the body of the resistor through ion implantation. After formation of the doped layer in the body of the resistor, calcination is done at temperature ranging from 250°C-850°C.

EFFECT: method allows for obtaining large surface resistance of polysilicon resistors with high accuracy and reproducibility by avoiding a large number of high-temperature operations after ion implantation of the body of the resistor and possibility of carrying out a fast control process and determining the required doping dosage for a specific batch of wafers with specific size of particles of polysilicon.

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