INTEGRATED CIRCUIT OF HIGH-VOLTAGE RECTIFIER Russian patent published in 1994 - IPC

Abstract RU 2006103 C1

FIELD: microelectronics. SUBSTANCE: structure of integrated circuit of high-voltage rectifier is provided with side injection. The "hidden" n_t layer in transformed in near-contact zone and p-type active conductivity zone is limited from four sides by mesa recesses of such depth which ensures distance not less than 25 microns between n_t- and n_t-type conductivity zones on n-layer along sides of V-shaped recess and under recess apex. EFFECT: extended operating capabilities.

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RU 2 006 103 C1

Authors

Tat'Janin V.I.

Dates

1994-01-15—Published

1991-06-28—Filed