HIGH-VOLTAGE INTEGRATED CIRCUIT Russian patent published in 1994 - IPC

Abstract RU 2006104 C1

FIELD: microelectronics. SUBSTANCE: concentration is such that in active p-type conductivity zone cylindrical and spherical diffusion profiles are so eliminated by etching on its three sides that from these sides the p-type zone is limited by mesa recesses filled by planarized layer of imidized polyamide protected by photoresistor, and from the fourth side there is cylindrical diffusion profile passivated by dielectric on which field plate is formed due to extended metallization. EFFECT: extended operating capabilities. 3 dwg

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RU 2 006 104 C1

Authors

Tat'Janin V.I.

Dates

1994-01-15—Published

1991-06-28—Filed