MANUFACTURING TECHNIQUE FOR SENSING MEMBER OF GAS TRANSDUCER Russian patent published in 1994 - IPC

Abstract RU 2006845 C1

FIELD: semiconductor instrumentation engineering. SUBSTANCE: tin dioxide layer with copper admixture is applied to insulating substrate and contacts to layer are made. Tin dioxide layer is applied by vacuum spraying of tin and copper alloy containing 0.05 to 2 atom-percent of copper followed by oxidation of this layer till full oxidation. EFFECT: facilitated procedure. 1 dwg

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RU 2 006 845 C1

Authors

Makhin Aleksej Vjacheslavovich

Ganus Andrej Ivanovich

Dates

1994-01-30—Published

1991-06-26—Filed