METHOD OF MANUFACTURING SILICON DIOXIDE FILM ON SUBSTRATE Russian patent published in 1998 - IPC

FIELD: microelectronics. SUBSTANCE: in a known method including preparing substrate surface by treating it with gas reagents and simultaneously affecting it by UV emission with wavelengths 185 and 254 nm at 200-250 C followed by depositing, in a single process cycle, silicon dioxide film from gas reagents, before preparation of surface, substrate is treated by nitrogen trifluoride-hydrogen gas mixture with partial pressures within 500-700 Pa range under UV irradiation with wavelength no higher than 170 nm at temperature 100-120 C. In this case, for preparation of surface, nitrogen trifluoride-hydrogen-oxygen mixture is used as gas reagent at partial pressures 500-700, 500-700, and 100-200 Pa, respectively, and when depositing film, tetramethoxysilane (50-100 Pa)-oxygen (500-1000 Pa) mixture is used. EFFECT: improved procedure. 3 tbl