FIELD: microelectronics. SUBSTANCE: device has semiconductor substrate 1, which contains isolated areas 2, which contains three identical conducting layers 3, 4, 5, which are separated by semiconductor structures which are designed as five alternating layers. Extreme layers 7 and middle layer 8 are made from material (GaAs) which inhibition area is lesser than for material (AlAs) of adjacent layers. EFFECT: decreased size, increased speed. 5 dwg
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