FIELD: nanostructure production. SUBSTANCE: invention refers to technology of production of nanostructures based on compounds A2B6 intended for manufacture of photosensitive nanoelectronic devices. Process of production of nanostructure based on compounds A2B6, includes implantation of particles of nanometric range of mentioned compound into porous dielectric substrate. But first external and internal surfaces of substrate are cleaned to monatomic level, then transition layer of atoms of compound A2B6 with stoichiometry providing for volumetric-structural correspondence of crystalline lattices on separation boundary is formed by method of molecular deposition. After this layer of compound A2B6 with volume of substance in each pair not less than volume of two elementary cells in crystalline lattice of compound is grown on surface of transition layer. Finally passivation of external surface of substrate is conducted. EFFECT: increased productivity of process.
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Authors
Dates
1998-02-20—Published
1994-09-27—Filed