FIELD: physics.
SUBSTANCE: claimed heterostructure for translucent photocathode of Ga arsenide by MOS-hydride epitaxy. Here locking ply and active region are grown at 600-640°C. Additionally, this structure includes transition ply of composition varying from p-GaAs to p-AlyGa1-yAs. Note that at growing the temperature is increased to 700-760°C. Buffer ply is grown on said transition ply at 700-760°C. Ply growth rate makes from 0.1 to 3 mcm/hour. Metalorganic zinc compound flow is selected to ensure the required concentration of acceptor dopant in grown plies.
EFFECT: higher quantum efficiency of photocathode.
3 cl, 1 dwg
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