METHOD OF MAKING ONE-TIME PROGRAMMABLE MEMORY ELEMENT Russian patent published in 2025 - IPC H10B20/25 

FIELD: microelectronics.

SUBSTANCE: invention relates to microelectronics and can be used in designing integrated circuits (IC) with an option of once-programmable memory. In the method of manufacturing a single-time programmable memory element, which is a capacitor, a layer of doped silicon is formed in a silicon plate, which is a lower plate of the capacitor, then a layer of silicon oxide is deposited, which is etched to the doped silicon layer along the titanium silicide region mask, the titanium silicide layer is deposited, the metal dielectric layer is deposited, in the metal dielectric layer a contact window is made to the doped silicon layer, in which an insulating dielectric and a capacitor upper plate are formed by applying a silicon oxide layer and further filling the contact window with a metal, then, a contact is made to the lower plate of the capacitor by forming a contact window in the layer of metal dielectric to the layer of titanium silicide, followed by filling it with metal.

EFFECT: increased degree of integration of elements of integrated circuits with submicron design standards on a chip and wider field of application of such integrated circuits.

1 cl, 1 dwg