FIELD: microelectronics. SUBSTANCE: during process of manufacture of ICs and silicon substrates isolating grooves are formed, diffusion region is created for "latent layer" and isolating silicon oxide film is produced. Then polysilicon film with thickness exceeding depth of grooves is deposited and layer of powder of glass ceramic of superfine milling with size of grains within 0.075-0.0001 mm is applied. Silicon substrate on side of isolating grooves is connected to additional substrate on which surface film of silicon oxide and layer of powder of glass ceramic are formed in advance. Then thermal treatment at temperature of crystallization of glass ceramic is conducted and material of silicon substrate is removed till opening of bottom of isolating grooves. EFFECT: reduced labour input due to reduced number of technological operations, increased output of good integrated circuits thanks to enhanced strength of structures. 4 dwg
