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2 012 102

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IPC

(21) (22)

Application

4940407/25, 1991-05-30

(22)

Actual filing date

1991-05-30

(45)

Published

1994-04-30

(72)

Inventor

Bogdanov Ju.M.Balyko A.K.Pashkovskij A.B.Petrov K.I.Tager A.S.Jatsjuk Ju.A.Gusel'Nikov N.A.

(73)

Holder

Gosudarstvennoe Nauchno-Proizvodstvennoe Predprijatie

MICROWAVE OSCILLATOR BUILT AROUND FIELD-EFFECT TRANSISTOR Russian patent published in 1994 - IPC

Abstract RU 2012102 C1

FIELD: electronic engineering. SUBSTANCE: active layer of Schottky-barrier field-effect transistor has stepped alloying profile; relation between layer thickness under gate A₁ and second layer thickness A₂, and concentration of admixture in them , respectively, satisfy A₂/A₁≥ 3 and relationships. EFFECT: reduced phase (frequency) noise of oscillator. 5 dwg

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RU 2 012 102 C1

Authors

Bogdanov Ju.M.

Balyko A.K.

Pashkovskij A.B.

Petrov K.I.

Tager A.S.

Jatsjuk Ju.A.

Gusel'Nikov N.A.

Dates

1994-04-30—Published

1991-05-30—Filed