FIELD-EFFECT TRANSISTOR Russian patent published in 1997 - IPC

Abstract RU 2093925 C1

FIELD: microelectronics. SUBSTANCE: Schottky-barrier field-effect transistor built on semi-insulating substrate with unequally doped active layer has part of active layer spaced from gate at distance exceeding 0.08 mcm with dope concentration higher then 2·I0¹⁷cm^-3 and surface density of this dope / I,3÷2,5 /·I0^I2cm^-2; part of active layer between mentioned part and gate has mean dope concentration ≥2·I0^I7cm^-3. EFFECT: improved design. 6 dwg

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RU 2 093 925 C1

Authors

Bogdanov Ju.M.

Pashkovskij A.B.

Tager A.S.

Jatsjuk Ju.A.

Petrov K.I.

Dates

1997-10-20—Published

1993-03-10—Filed