FIELD-EFFECT TRANSISTOR WITH SCHOTTKY BARRIER Russian patent published in 2021 - IPC H01L29/812 

FIELD: physics.

SUBSTANCE: disclosed is a field transistor with a Schottky barrier, comprising a semi-insulating substrate, electrodes of a source, a gate, a drain, on the semi-insulating substrate there is an inhomogeneously doped active semiconductor layer of two parts, first and second, first part - at a given distance from the gate electrode, with concentration of dopant greater than 2×10¹⁷ cm^-3 and given surface density of said impurity, second part is between said first part and gate electrode, with dopant concentration of less than 2×10¹⁷ cm^-3, the gate electrode is made on the opposite surface of the active semiconductor layer. Semi-insulating substrate is made from monocrystalline gallium arsenide, said first part of inhomogeneously doped active semiconductor layer is made at distance from gate electrode of more than 0.05 mcm, with thickness of less than 0.07 mcm, with doping impurity surface density (0.6-3.0)×10¹² cm^-2, field transistor with Schottky barrier further includes a buffer and contact layers, wherein buffer layer is made between said semi-insulating substrate and non-uniformly doped active semiconductor layer, with thickness of more than 0.2 mcm, contact layer is made on second part of non-uniformly doped active semiconductor layer, with thickness of more than 0.01 mcm, with concentration of dopant greater than 2×10¹⁸ cm^-3, on its opposite surface there are electrodes of source and drain, distance between borders of contact layer under electrodes of source and drain more than 0.8 mcm, said gate electrode has a length of less than 0.7 mcm, at equal distance from the center between the boundaries of the contact layer under the source and drain electrodes, or is shifted towards the source electrode.

EFFECT: higher amplification coefficient of a field-effect transistor with a Schottky barrier, lower level of low-frequency noise of microwave devices on the MESFET.

1 cl, 3 dwg, 1 tbl