PROCESS OF MANUFACTURE OF SEMICONDUCTOR DETECTORS OF DOSAGE RATE OF IONIZING RADIATION Russian patent published in 1994 - IPC

FIELD: semiconductor electronics. SUBSTANCE: in process of manufacture of semiconductor detectors of dosage rate of ionizing radiation on base of monocrystal silicon of p-type silicon plates are in sequence doped with iridium, boron and phosphorus. Firing is conducted at temperature 540-560 C for the course of 30-40 min with subsequent cooling at rate of not more than 2 deg/min. Then contacts are brazed and detector is assembled and sealed in case. EFFECT: facilitated manufacture. 1 tbl