METHOD OF MANUFACTURE OF LSI CIRCUITS BASED ON VALVE MATRIXES Russian patent published in 1994 - IPC

Abstract RU 2017266 C1

FIELD: microelectronics. SUBSTANCE: method is intended for manufacture of complementary MOS LSI circuits. Field polysilicon layers and active regions of two types of conductance are created on silicon substrate. Pyrolytic layers of silicon oxide and of phosphorous soda-lime glass are precipitated. Contact windows are open in layer of glass. Additional contact windows in region of n-type and polysilicon are opened in areas of possible contacting of metallization. EFFECT: facilitated manufacture.

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RU 2 017 266 C1

Authors

Meshcherjakov N.Ja.

Tsybin S.A.

Dates

1994-07-30—Published

1990-12-17—Filed