PROCESS OF MANUFACTURE OF TWO-LEVEL COATING Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: process includes formation of active elements of structure with first level of deposition of coating, application of interlevel dielectric, etching of contact windows, formation of second level of coating. Layer of silicon dioxide is deposited on first level at low temperature and under reduced pressure. Then photoresist is applied and contact windows are formed in it and anisotropic etching over entire surface is conducted with same speeds. EFFECT: facilitated manufacturing process. 5 dwg, 1 tbl