FIELD: physics.
SUBSTANCE: invention relates to semiconductor electronic engineering. The method of making a transistor microwave LDMOS structure deposited on a gate insulator involves coating polysilicon with a refractory metal; forming a polycide of the refractory metal; depositing a protective photoresist layer on the front side of the substrate; opening windows in the protective photoresist layer, the refractory metal polycide, polysilicon and the gate insulator over source p+-jumpers and adjacent portions of a high-ohmic p--layer of the substrate, thereby initially forming only source lateral faces of polycide gate electrodes of the transistor cells; embedding boron ions into the substrate through the opened windows; removing the photoresist from the front surface of the substrate and, via subsequent diffusion distillation of the impurities embedded into the substrate, forming p-pockets of elementary cells; removing the refractory metal polycide and the polysilicon from the front surface of the substrate in the space between the p-pockets of the transistor cells and forming drain lateral faces of polycide gate cogs and polycide gate electrodes of the elementary cells overall; in the high-ohmic epitaxial p--layer of the substrate at the source and in the space between the drain lateral faces of polycide gate electrodes, forming highly doped source n+-regions and highly doped and multi-stage weakly doped n-regions of the drain of the elementary cells; forming metal shielding electrodes of the transistor cells in the interlayer dielectric; pin-point shutting the polycide gate cogs of the cells with common metal gate buses formed on the top surface of the multilevel interlayer dielectric over source p+-jumpers of elementary cells.
EFFECT: basic process of making powerful silicon microwave LDMOS structures and transistors using cheaper equipment capable of operating in the frequency range of 3,0-3,6 GHz at high drain supply voltages.
5 dwg
Title | Year | Author | Number |
---|---|---|---|
MANUFACTURING METHOD OF HIGH-POWER SHF LDMOS TRANSISTORS | 2013 |
|
RU2535283C1 |
METHOD OF MANUFACTURING OF POWERFUL SILICON SHF LDMOS TRANSISTORS WITH MODERNIZED GATE NODE OF ELEMENTARY CELLS | 2016 |
|
RU2639579C2 |
MANUFACTURING METHOD OF SHF LDMOS TRANSISTORS | 2010 |
|
RU2439744C1 |
POWERFUL MICROWAVE LDMOS TRANSISTOR AND METHOD OF ITS MANUFACTURING | 2011 |
|
RU2473150C1 |
MANUFACTURING METHOD OF SHF LDMOS TRANSISTORS | 2012 |
|
RU2498448C1 |
MANUFACTURING METHOD OF SHF POWERFUL FIELD LDMOS TRANSISTORS | 2008 |
|
RU2364984C1 |
SHF LDMOS-TRANSISTOR | 2007 |
|
RU2338297C1 |
METHOD OF MAKING POWER INSULATED-GATE FIELD-EFFECT TRANSISTORS | 2006 |
|
RU2361318C2 |
DESIGN OF DISCRETE MICROWAVE LDMOS-TRANSISTOR CRYSTAL WITH IMPROVED SOURCE SHIELDING BUS | 2024 |
|
RU2819579C1 |
METHOD OF MAKING MICROWAVE LDMOS-TRANSISTOR CRYSTALS WITH MULTILAYER DRIFT DRAIN REGION | 2024 |
|
RU2819581C1 |
Authors
Dates
2014-05-10—Published
2012-11-13—Filed