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2 019 902

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IPC

(21) (22)

Application

4948294/21, 1991-06-26

(22)

Actual filing date

1991-06-26

(45)

Published

1994-09-15

(72)

Inventor

Dvinskikh V.А.Мikhajlov А.I.Кlimov В.N.Кalinin S.G.

(73)

Holder

Nauchno-Issledovatel'Skij Institut Mekhaniki I Fiziki Pri Saratovskom Gosudarstvennom Universitete

SUPERHIGH-FREQUENCY DIODE Russian patent published in 1994 - IPC

Abstract RU 2019902 C1

FIELD: electronics. SUBSTANCE: semiconductor crystal is placed at point of joining of first and second coaxial resistors. EFFECT: increased reliability. 4 cl, 4 dwg

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RU 2 019 902 C1

Authors

Dvinskikh V.А.

Мikhajlov А.I.

Кlimov В.N.

Кalinin S.G.

Dates

1994-09-15—Published

1991-06-26—Filed