FIELD: physics.
SUBSTANCE: invention can be used to create high-power microwave photodetectors based on GaAs/AlxGa1-xAs epitaxial structures sensitive to radiation at a wavelength of 810–860 nm. Method of making photodetectors of a high-power fiber-optic microwave module includes creating a photosensitive region on a n-type GaAs semiconductor substrate based on GaAs/AlxGa1-xAs epitaxial structures and wide-gap window from AlxGa1-xAs sensitive to radiation at a wavelength of 810–860 nm, creating a p-type GaAs contact layer, creating a frontal ohmic contact area on the surface of the contact layer, creating a solid rear ohmic contact on the back surface of the GaAs substrate. Antireflection coating is formed on the photosensitive area, frontal ohmic contact tires are made with a width of 4–8 mcm, form the mesa structure outside the contact area and the photosensitive area at a distance of 1–5 mcm from the contact area, create an additional frontal contact outside the mesa structure on the front surface of the semiconductor substrate, photodetectors are mounted on an AlN ceramic plate, the ceramic plate is mounted on a heat-removing base of the module, optical fiber is mounted and the microwave module is packaged.
EFFECT: invention provides the possibility of creating high-power microwave photodetectors with laser radiation delivered over fiber optic, which would have an increased working power, a reduced value of the reflection coefficient of radiation, increased speed by reducing losses on parasitic capacitance and inductance, and, accordingly, high radiation conversion efficiency and speed of a powerful fiber-optic microwave module based on them.
1 cl, 5 dwg
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Authors
Dates
2018-12-19—Published
2018-02-05—Filed