SHF PHOTO DETECTOR MANUFACTURING METHOD Russian patent published in 2018 - IPC H01L31/18 

FIELD: optics; electrical equipment.

SUBSTANCE: invention relates to the optoelectronics, and can be used for the powerful SHF photodetector development, based on the sensitive to radiation at a wavelength of 810–860 nm GaAs/Al_xGa_1-xAs epitaxial structures. Method consists in the multilayer structure creation from the Al_xGa_1-xAs and GaAs alternating layers system on the GaAs n-type substrate, creation of the Al_xGa_1-xAs wide-zone window on the multilayer structure surface, GaAs p-type contact layer formation on the wide-zone window surface, the front and rear ohmic contacts creation, the antireflection coating formation, and the mesa structure side surface passivation performance. Frontal ohmic contact bus is made in the form of a truncated pyramid with the wide rear base and the mirrored side surface.

EFFECT: invention enables reduction in the photodetector photosensitive region ohmic losses and shading losses by the contact buses creation in the form of truncated pyramids with the wide base and with the mirrored side walls, increase in the photodetector operation power, decrease in the leakage currents along the photodetector side surface.

3 cl, 3 dwg