FIELD: radio engineering.
SUBSTANCE: invention relates to the field of radio engineering. To achieve the effect, a source follower is proposed, which contains an input (1) and an output (2) of the device, an input field-effect transistor (3), the drain of which is connected to the first (4) power supply bus, the gate is connected to the input (1) of the device, and the source is connected with the output (2) of the device, the output field effect transistor (5), the source of which is connected to the second (6) power supply bus, and the drain is connected to the output of the device (2). The source of the input fet (3) is connected to the output of the device (2) through the first (7) forward-biased p-n-junction, and the source of the output fet (5) is connected to the second (6) power supply bus through the second (8) forward-biased p-n-junction, and the gate of the output field effect transistor (5) is connected to the second (6) power supply bus.
EFFECT: reduction of the systematic component of the zero bias voltage of the source follower from units of volts to the level of units of microvolts.
7 cl, 17 dwg
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