FIELD: manufacture of semiconductor instruments. SUBSTANCE: method involves forming configuration of components in layers of silicides of high-melting point metals and cobalt by providing photoresist mask; etching exposed portions of silicon-bearing layers in reactor in plasma of gaseous mixture of CF4+N2+O2, with ratio of components CF4:N2:O2=(12-14):(4-6):1, total gas flow rate of 8-10 l/hour, power density of 1,6-1,8 Wt/cm2 and pressure in reactor work volume within 30-40 Pa. EFFECT: increased efficiency and wider operational capabilities.
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