FIELD: microelectronics, in particular, manufacturing of semiconductor devices when they are mounted in housings. SUBSTANCE: method involves application of aluminum and germanium layers on collector side of plate with generated semiconductor structures, separation of plates into crystals and soldering crystals on crystal holder. After application of germanium layer additional aluminum layer which depth is in range of 0.05-0.15 of depth of germanium layer is applied and device is processed under temperature of 424-510 C in gas mix which contains oxidizing components such as oxygen and/or water vapors in amount of not greater than 3 percents by volume. EFFECT: increased functional capabilities.
